High quality atomically thin PtSe2 films grown by molecular beam epitaxy
High quality atomically thin PtSe2 films grown by molecular beam epitaxy
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通过分子束外延生长的高质量原子级薄 PtSe2 薄膜
DOI：
10.1088/2053-1583/aa8919
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发表时间：
2017-12-01
期刊：
影响因子：
5.5
通讯作者：
Zhou, Shuyun
中科院分区：
文献类型：
--
作者：
Yan, Mingzhe;Wang, Eryin;Zhou, Shuyun
原子级薄的PtSe 2薄膜在高速电子学、自旋电子学和光电探测器等领域有着广泛的应用前景。获得具有大尺寸和受控厚度的高质量薄膜是至关重要的。在这里，我们报告的第一个成功的外延生长的高品质PtSe2薄膜的分子束外延。从1 ML到22 ML的原子薄膜已经生长，并通过低能电子衍射，拉曼光谱和X射线光电子能谱进行表征。此外，一个系统的厚度依赖的电子结构的研究揭示了角分辨光电子能谱（ARPES），和螺旋自旋织构揭示了自旋ARPES。我们的工作为生长大尺寸单晶薄膜提供了新的机会，以研究PtSe2的物理性质和潜在的应用。
Atomically thin PtSe2 films have attracted extensive research interests for potential applications in high-speed electronics, spintronics and photodetectors. Obtaining high quality thin films with large size and controlled thickness is critical. Here we report the first successful epitaxial growth of high quality PtSe2 films by molecular beam epitaxy. Atomically thin films from 1 ML to 22 ML have been grown and characterized by low-energy electron diffraction, Raman spectroscopy and x-ray photoemission spectroscopy. Moreover, a systematic thickness dependent study of the electronic structure is revealed by angle-resolved photoemission spectroscopy (ARPES), and helical spin texture is revealed by spin-ARPES. Our work provides new opportunities for growing large size single crystalline films to investigate the physical properties and potential applications of PtSe2.