Selective growth of GaN on a SiC substrate patterned with an AlN seed layer by ammonia molecular-beam epitaxy
Selective growth of GaN on a SiC substrate patterned with an AlN seed layer by ammonia molecular-beam epitaxy
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通过氨分子束外延在带有 AlN 种子层图案的 SiC 衬底上选择性生长 GaN
DOI：
10.1063/1.1413956
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发表时间：
2001
影响因子：
4
通讯作者：
S. Rolfe
中科院分区：
文献类型：
--
作者：
H. Tang;J. Bardwell;J. Webb;S. Moisa;J. Fraser;S. Rolfe
利用氨分子束外延技术，利用SiC衬底作为假掩膜，在4H-SiC上实现了GaN的高选择性生长。在典型的氮化镓生长条件下，观察到裸露的SiC表面完全没有成核。GaN层的成核优先发生在图案化的薄（300 a） AlN种子层上，该种子层使用磁控溅射外延技术预先沉积在SiC表面，并通过光刻和化学辅助离子束蚀刻形成平行条纹。通过扫描电子显微镜和x射线衍射观察到侧面过度生长的证据。由于横向生长，生长的氮化镓条纹显示出非常光滑的侧面。
Highly selective growth of GaN on 4H–SiC using the SiC substrate as a pseudomask has been demonstrated using the ammonia molecular-beam-epitaxy technique. A total lack of nucleation on the bare SiC surface was observed under typical GaN growth conditions. The nucleation of the GaN layer occurred preferentially from a patterned thin (300 A) AlN seed layer, which had been predeposited on the SiC surface using the magnetron-sputter-epitaxy technique and patterned into parallel stripes by photolithography and chemically assisted ion-beam etching. Evidence of lateral overgrowth was observed by scanning electron microscopy and x-ray diffraction studies. The GaN stripes grown show extremely smooth side facets due to the lateral growth.