Investigation of deep levels in n-type 4H-SiC epilayers irradiated with low-energy electrons
Investigation of deep levels in n-type 4H-SiC epilayers irradiated with low-energy electrons
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DOI：
10.1063/1.2401658
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发表时间：
2006-12-01
影响因子：
3.2
通讯作者：
Kimoto, Tsunenobu
中科院分区：
文献类型：
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作者：
Danno, Katsunori;Kimoto, Tsunenobu
用深能级瞬态谱（DLTS）研究了n型4 H-SiC外延层中的深能级。Z（1/2）和EH 6/7中心在生长态样品中占主导地位。在116 keV的电子辐照后，只有碳原子可以被取代，Z（1/2）和EH 6/7浓度显着增加。Z（1/2）和EH 6/7中心在1500-1600 ℃下是稳定的，并且它们的浓度通过在1600-1700 ℃下退火而降低。在辐照样品中，Z（1/2）和EH 6/7心的陷阱浓度随电子注量的0.7次方增加。Z（1/2）和EH 6/7中心的浓度是非常接近彼此在所有种类的样品中，作为生长，作为辐照，和退火的，即使生长条件，辐照（能量和注量），和退火已经改变。该结果表明，Z（1/2）和EH 6/7中心在微观上都包含相同的缺陷，例如碳空位。(c)2006年，美国物理学会。
Deep levels in n-type 4H-SiC epilayers have been investigated by deep level transient spectroscopy (DLTS). The Z(1/2) and EH6/7 centers are dominant in as-grown samples. After electron irradiation at 116 keV, by which only carbon atoms may be displaced, the Z(1/2) and EH6/7 concentrations are significantly increased. The Z(1/2) and EH6/7 centers are stable up to 1500-1600 degrees C and their concentrations are decreased by annealing at 1600-1700 degrees C. In the irradiated samples, the trap concentrations of the Z(1/2) and EH6/7 centers are increased with the 0.7 power of the electron fluence. The concentrations of the Z(1/2) and EH6/7 centers are very close to each other in all kinds of samples, as-grown, as-irradiated, and annealed ones, even though the condition of growth, irradiation (energy and fluence), and annealing has been changed. This result suggests that both Z(1/2) and EH6/7 centers microscopically contain the same defect such as a carbon vacancy. (c) 2006 American Institute of Physics.