EXCITATION-POWER DEPENDENCE OF THE NEAR-BAND-EDGE PHOTOLUMINESCENCE OF SEMICONDUCTORS
EXCITATION-POWER DEPENDENCE OF THE NEAR-BAND-EDGE PHOTOLUMINESCENCE OF SEMICONDUCTORS
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DOI：
10.1103/physrevb.45.8989
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发表时间：
1992-04-15
影响因子：
3.7
通讯作者：
ZULEHNER, W
中科院分区：
文献类型：
--
作者：
SCHMIDT, T;LISCHKA, K;ZULEHNER, W
我们给出了近带边缘光致发光(NBEPL)与激发光功率的关系的模型计算。我们的模型解释了以前在实验中观察到的NBEPL功率依赖的所有特征：(I)激子光致发光强度I随L(K)的变化，其中L是激发功率，k是1到2之间的指数；(Ii)当L变化超过两个数量级时，偏离了i近似的L(K)定律；以及(Iii)当激发激光的波长变化时，激子发射线的k的变化。此外，我们的模型还将自由激子、束缚激子和自由到束缚跃迁的k值联系起来。计算结果与实验数据吻合较好。
We present a model calculation for the dependence of the near-band-edge photoluminescence (NBEPL) on the power of the exciting laser light. Our model explains all features of the NBEPL power dependence that were previously observed in experiment: (i) the variation of the excitonic photoluminescence intensity I with L(k), where L is the excitation power and k is an exponent between 1 and 2, (ii) deviations from the I approximately L(k) law as L is varied by more than two orders of magnitude, and (iii) the variation of k for exciton emission lines when the wavelength of the exciting laser radiation is varied. Furthermore, our model relates the k values of the free exciton, bound exciton, and the free-to-bound transitions. The results are in excellent agreement with experimental data.