Low temperature Fermi-Dirac distribution in InAsP quantum dot lasers
Low temperature Fermi-Dirac distribution in InAsP quantum dot lasers
复制标题
DOI：
10.1016/j.optmat.2021.111697
复制
发表时间：
2021-10-19
影响因子：
3.9
通讯作者：
Karomi, Ivan B.
中科院分区：
文献类型：
--
作者：
Karomi, Ivan B.
采用分段接触法分析了770 nm InAsP量子点激光器中载流子的费米-狄拉克分布，研究了载流子的几率分布。本研究将InAsP量子点材料的结果与卡迪夫大学开发的标准720 nm InP量子点激光器的结果进行了比较。两种样品在相同条件下在相容晶片上生长。InAsP量子点显示出不均匀的点尺寸与更高的应变场，证明了透射电子显微镜图像，以及更深的点约束约100毫电子伏，证实了光电压谱。这项研究揭示了费米-狄拉克分布在150 K的InAsP量子点材料的故障。这可能使InAsP成为超快源产生的有能力的申请人。
We examine the probability of carriers in a 770 nm InAsP quantum dot (QD) laser by analyzing Fermi-Dirac distribution using the segmented contact method. This study compares the results of InAsP QD materials with the standard 720 nm InP QD laser that was developed by Cardiff University. Both samples were grown under the same conditions on a compatible wafer. InAsP QD showed non-uniformity in the dot size with a higher strain field, as evidenced by transmission electron microscopy images, as well as a deeper dot confinement by approximately 100 meV, as confirmed by Photovoltage Spectroscopy. This study revealed a breakdown of the Fermi-Dirac distribution at 150 K for InAsP QD materials. This could make InAsP a capable applicant for the ultrafast source generation.