Growth of GaAs1−xBix by molecular beam epitaxy: Trade-offs in optical and structural characteristics
Growth of GaAs1−xBix by molecular beam epitaxy: Trade-offs in optical and structural characteristics
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通过分子束外延生长 GaAs1−xBix：光学和结构特性的权衡
DOI：
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发表时间：
2014
期刊：
影响因子：
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通讯作者：
A. Brown
中科院分区：
文献类型：
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作者：
Jincheng Li;Tong‐Ho Kim;K. Forghani;W. Jiao;W. Kong;K. Collar;T. Kuech;A. Brown
最近的工作表明，在分子束外延(MBE)中，当表面过程通过增加生长速度而受到动力学限制时，铋的掺入增加。在这里，我们探索了当GaAs1−xBix薄膜生长在不同程度的动力学限制条件下时，结构和光学性质是如何被改变的，通过改变生长温度和生长速度来实现。在典型的GaAs1−xBix分子束外延生长条件下，我们比较了在较低的动力学限制条件下生长的成分相似(∼3%)的薄膜，即在较高的温度(∼350 °C)和较低的生长速率(∼0.5μm/h)下获得的相对较低的镓过饱和度，与远离平衡生长的薄膜，具体地说，在较低的生长温度(∼290 °C)和较高的生长速率(∼1.4μm/h)下获得了较高的过饱和度。当样品在较少的基尼系数下生长时，x-射线衍射谱的半高宽和300 K的光致发光强度都增大。
Recent work has shown that Bi incorporation increases during molecular beam epitaxy (MBE) when surface processes are kinetically limited through increased growth rate. Herein we explore how the structural and optical properties of GaAs1−xBix films are modified when grown under conditions with varying degrees of kinetic limitations realized through growth temperature and growth rate changes. Within the typical window of MBE growth conditions for GaAs1−xBix, we compare films with similar (∼3%) compositions grown under conditions of reduced kinetic limitations, i.e., relatively low gallium supersaturation achieved at higher temperatures (∼350 °C) and lower growth rates (∼0.5 μm/h), to those grown farther from equilibrium, specifically, higher supersaturation achieved at lower growth temperatures (∼290 °C) and higher growth rates (∼1.4 μm/h). Both the x-ray diffraction full width at half maximum of the omega-2theta scan and the 300 K photoluminescence intensity increase when samples are grown under less kinet...