A study on tunneling magnetoresistance in magnetic tunnel junctions oxidized by ozone
A study on tunneling magnetoresistance in magnetic tunnel junctions oxidized by ozone
复制标题
臭氧氧化磁隧道结的隧道磁阻研究
DOI：
10.1016/s0304-8853(01)00098-1
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发表时间：
2001
影响因子：
2.7
通讯作者：
T. Lee
中科院分区：
文献类型：
--
作者：
Byong‐Guk Park;T. Lee
研究了Ta/NiFe/FeMn/NiFe/CoFe/Al2O3/CoFe/NiFe结构的磁隧道结。使用两种不同类型的氧化气氛来形成阻挡层；等离子体氧化和臭氧氧化。室温下臭氧氧化50min，观察到最大隧道磁阻比为32%。 0.1mm×0.2mm结处的结电阻为数百欧姆。这比等离子体氧化结大约低一个数量级。无等离子体氧化工艺将消除氧离子轰击可能造成的结构损坏，并改善对隧道势垒生长的控制。
Magnetic tunnel junctions of Ta/NiFe/FeMn/NiFe/CoFe/Al2O3/CoFe/NiFe structure were studied. Two different types of oxidation atmosphere were used to form the barrier layer; plasma oxidation and ozone oxidation. The maximum tunneling magnetoresistance ratio of 32% was observed at room temperature for 50min ozone oxidation. The junction resistance was several hundred ohms at 0.1mm×0.2mm junction. This is about one order lower than that of the plasma oxidized junctions. The plasma free oxidation process would eliminate the possible structural damage by an oxygen ion bombardment and give improved control over the tunnel barrier growth.