Single-Switch High Step-Up Converters With Built-In Transformer Voltage Multiplier Cell
Single-Switch High Step-Up Converters With Built-In Transformer Voltage Multiplier Cell
复制标题
具有内置变压器电压倍增器单元的单开关高升压转换器
DOI：
10.1109/tpel.2012.2183620
复制
发表时间：
2012-01
影响因子：
6.7
通讯作者：
He, Xiangning
中科院分区：
文献类型：
--
作者：
Deng, Yan;Rong, Qiang;Li, Wuhua;Zhao, Yi;Shi, Jianjiang;He, Xiangning
本文提出了一种内置电压增益扩展单元，给出了用于大电压增益转换系统的下一代高升压变换器的通用拓扑推导。设计了几种改进的内置变压器电压倍增单元的单开关高升压变换器，具有极大的电压转换比、最小的功率器件电压应力、有效的二极管反向恢复缓解和软开关操作等优点。内置变压器的匝数比可以作为另一个设计自由度来扩展电压增益，具有很大的设计灵活性。与有源钳位相比，只需一个MOSFET即可简化电路配置并提高系统可靠性。研究了过谐振频率和下谐振频率工作模式，探索了电路的性能，并提供了关键参数设计准则，对未来的工业应用具有重要的指导意义。最后，给出了500 W 36-380 V样机的实验结果，验证了本文主要贡献的有效性。
In this paper, a built-in voltage gain extension cell is proposed to give a universal topology derivation on next-generation high step-up converters for large voltage gain conversion systems. Several improved single-switch high step-up converters with built-in transformer voltage multiplier cell are derived with some advantageous performance, which includes extremely large voltage conversion ratio, minimized power device voltage stress, effective diode reverse-recovery alleviation, and soft-switching operation. The turns ratio of the built-in transformer can be employed as another design freedom to extend the voltage gain, which shows great design flexibility. Compared with their active clamp counterpart, only one MOSFET is required to simplify the circuit configuration and improve the system reliability. The over resonance frequency and the below resonance frequency operation modes are studied to explore the circuit performance, and the key parameter design criterion is provided to show a valuable guidance for future industrial applications. Finally, the experimental results from a 500 W 36-380 V prototype are provided to validate the effectiveness of the main contributions in this paper.
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DOI：
10.1109/tcsi.2008.918195
发表时间：
2008-02
期刊：
IEEE Transactions on Circuits and Systems I: Regular Papers
影响因子：
--
作者：
E. Ismail;M. A. Al-Saffar;A. Sabzali
通讯作者：
E. Ismail;M. A. Al-Saffar;A. Sabzali
DOI：
10.1109/pesc.2008.4592410
发表时间：
2008-06
期刊：
2008 IEEE Power Electronics Specialists Conference
影响因子：
--
作者：
B. Axelrod;Y. Berkovich;S. Tapuchi;A. Ioinovici
通讯作者：
B. Axelrod;Y. Berkovich;S. Tapuchi;A. Ioinovici
影响因子：
2
作者：
Y. Berkovich;A. Shenkman;B. Axelrod;G. Golan
通讯作者：
Y. Berkovich;A. Shenkman;B. Axelrod;G. Golan
DOI：
10.1049/cp.2010.0009
发表时间：
2010-04
期刊：
--
影响因子：
--
作者：
Yi Zhao;Wuhua Li;Yan Deng;Xiangning He;S. Lambert;V. Pickert
通讯作者：
Yi Zhao;Wuhua Li;Yan Deng;Xiangning He;S. Lambert;V. Pickert
影响因子：
6.7
作者：
R. Wai;Rou-Yong Duan
通讯作者：
R. Wai;Rou-Yong Duan