Interpretation of high electrical resistivity behavior based on the structure determination of the Al–Cu–(Fe,Ru)–Si 1/1-cubic approximants
Interpretation of high electrical resistivity behavior based on the structure determination of the Al–Cu–(Fe,Ru)–Si 1/1-cubic approximants
复制标题
基于 Al-Cu-(Fe,Ru)-Si 1/1-立方近似的结构测定对高电阻率行为的解释
DOI:
10.1016/s0925-8388(02)00268-2
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发表时间:
2002
影响因子:
6.2
通讯作者:
U. Mizutani
中科院分区:
文献类型:
--
作者:
T. Takeuchi;U. Mizutani
The local atomic structure of Mackay icosahedral-type Al–Cu–(Fe,Ru)–Si 1/1-cubic approximants was determined by applying the Rietveld method to the powder diffraction spectra taken with synchrotron radiation. We found that these 1/1-cubic approximants involve chemical and structural disorders and that the difference in the magnitude of their electrical resistivities can be explained by taking into account the difference in the degree of chemical and structural disorder. The electrical resistivity of the Al54Cu25.5Ru12.5Si81/1-cubic approximant characterized by the possession of the strongest disorder is found to be the largest among the samples studied and to be comparable to that of the corresponding Al63Cu25Ru12quasicrystal. We conclude that the degree of disorder involved in the atomic arrangements plays a more crucial role than the quasi-periodicity in determining the magnitude of the electrical resistivity in both quasicrystals and their 1/1-cubic approximants.