High-Efficiency Ultraviolet Emission from AlInN/GaN Nanowires Grown by Molecular Beam Epitaxy

High-Efficiency Ultraviolet Emission from AlInN/GaN Nanowires Grown by Molecular Beam Epitaxy
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DOI：
10.1364/cleo_si.2020.stu3p.4
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发表时间：
2020-05
期刊：
2020 Conference on Lasers and Electro-Optics (CLEO)
影响因子：
--
通讯作者：
R. Velpula;B. Jain;H. Bui;H. Nguyen
R. Velpula;B. Jain;H. Bui;H. Nguyen
中科院分区：
其他
文献类型：
--
作者：
R. Velpula;B. Jain;H. Bui;H. Nguyen

文献摘要

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介绍了 AlInN/GaN 核壳纳米线结构的外延生长和表征，该结构在紫外波长范围内具有高度稳定的发射和约 52% 的高内量子效率。
The epitaxial growth and characterization of AlInN/GaN core-shell nanowire structures with highly stable emission and high internal quantum efficiency of ∼52% in the ultraviolet wavelength range are presented.