Charge collection studies in irradiated HV-CMOS particle detectors
Charge collection studies in irradiated HV-CMOS particle detectors
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DOI：
10.1088/1748-0221/11/04/p04007
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发表时间：
2016-04-01
影响因子：
1.3
通讯作者：
Zhu, H.
中科院分区：
文献类型：
--
作者：
Affolder, A.;Andelkovic, M.;Zhu, H.
研究了反应堆中子辐照前后HV-CMOS工艺粒子探测器的电荷收集特性。两种不同的传感器类型的设计和加工在180和350 nm技术的AMS。用Sr-90源的电子进行边缘TCT和电荷收集测量。从未耗尽的衬底产生的载流子的扩散有助于显着的电荷收集照射前，而照射后的漂移贡献占上风，如在不同的成形时间的电荷测量所示。在给定的偏置电压的耗尽区被发现增长与感兴趣的通量范围内的条带探测器在HL-LHC的照射。这导致测量的电荷相对于照射前的电荷有很大的增益。耗尽区的增加归因于有效受主的去除。研究了耗尽区随注量的演化规律并建立了模型。初步研究表明，短期退火对电荷收集的影响很小。
Charge collection properties of particle detectors made in HV-CMOS technology were investigated before and after irradiation with reactor neutrons. Two different sensor types were designed and processed in 180 and 350 nm technology by AMS. Edge-TCT and charge collection measurements with electrons from Sr-90 source were employed. Diffusion of generated carriers from undepleted substrate contributes significantly to the charge collection before irradiation, while after irradiation the drift contribution prevails as shown by charge measurements at different shaping times. The depleted region at a given bias voltage was found to grow with irradiation in the fluence range of interest for strip detectors at the HL-LHC. This leads to large gains in the measured charge with respect to the one before irradiation. The increase of the depleted region was attributed to removal of effective acceptors. The evolution of depleted region with fluence was investigated and modeled. Initial studies show a small effect of short term annealing on charge collection.