Three-dimensional observation of internal defects in semiconductor crystals by use of two-photon excitation.
Three-dimensional observation of internal defects in semiconductor crystals by use of two-photon excitation.
复制标题
利用双光子激发对半导体晶体内部缺陷进行三维观察。
作者：
Y. Kawata;Shigetoshi Kunieda;T. Kaneko
我们提出了一种利用双光子激发对蓝色激光器半导体晶体内部缺陷进行三维观察的方法。我们通过使用双光子过程激发光致发光。由于半导体材料本质上在短波长区域具有高吸收，因此光致发光的激发光大部分被晶体吸收。深层区域的缺陷很难观察到。双光子激发可以克服这一限制，因为可以用近红外光代替蓝光来激发光致发光，并且近红外光仅在聚焦点被吸收。激发光可以穿透到晶体的深层区域。我们成功地观察到了 ZnSe 晶体中晶体表面以下约 200 微米的缺陷。据我们所知，这是首次利用双光子激发观察半导体晶体缺陷的三维结构。
We present a method of three-dimensional observation of internal defects in semiconductor crystals for blue lasers by use of two-photon excitation. We excite photoluminescence by using a two-photon process. Since semiconductor materials have intrinsically high absorption in the short-wavelength region, the excitation light of photoluminescence is largely absorbed by the crystals. It is difficult to observe defects in deep regions. Two-photon excitation can overcome this limitation because near-infrared light can be used instead of blue light for excitation of photoluminescence, and the near-infrared light is absorbed at only the focused point. The excitation light can penetrate into the deep regions of the crystal. We succeeded in observing defects in a ZnSe crystal ~200 microm below the crystal surface. This is, as far as we know, the first demonstration of the observation of three-dimensional structures of defects in semiconductor crystals by the use of two-photon excitation.
影响因子：
56.9
作者：
DENK, W;STRICKLER, JH;WEBB, WW
通讯作者：
WEBB, WW