Au–Sn bonding material for the assembly of power integrated circuit module
Au–Sn bonding material for the assembly of power integrated circuit module
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DOI：
10.1016/j.jallcom.2016.02.065
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发表时间：
2016-06
影响因子：
6.2
通讯作者：
Z. X. Zhu;Chung Chen Li;L. Liao;Chun-Kai Liu;C. Kao
中科院分区：
文献类型：
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作者：
Z. X. Zhu;Chung Chen Li;L. Liao;Chun-Kai Liu;C. Kao
绝缘栅双极晶体管（IGBT）芯片是高温电力电子模块中的关键器件，它必须在直流和交流电之间进行有效的转换。在这项研究中，共晶Au-Sn （20 wt.% Sn）通过固液互扩散（slide）键合成功地用于组装IGBT芯片和直接键合铜衬底。在随后的150、200和240℃等温时效过程中，研究了金属间化合物的微观结构演变和生长动力学。具有优异的热稳定性和机械强度。结果表明，共晶金锡焊料是采用slip工艺组装高温IGBT的理想焊料。
Insulated gate bipolar transistor (IGBT) chips are the key components in high-temperature power electronic modules, which have to efficiently convert electricity between direct and alternating current. In this study, the eutectic Au–Sn (20 wt.% Sn) is successfully used to assemble IGBT chips and direct-bond-copper substrates by using solid liquid interdiffusion (SLID) bonding. During subsequent isothermal aging at 150, 200, and 240 °C, the microstructure evolution and growth kinetics of intermetallic compounds are investigated. Excellent thermal stability and mechanical strength are observed. It is concluded that the eutectic Au–Sn solder is ideal to assemble high-temperature IGBT by using the SLID process.