A model describing the electrical behavior of a‐SiN:H alloys
A model describing the electrical behavior of a‐SiN:H alloys
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描述 a-SiN:H 合金电学行为的模型
DOI：
10.1063/1.337318
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发表时间：
1986
期刊：
影响因子：
--
通讯作者：
W. Knolle
中科院分区：
文献类型：
--
作者：
J. Osenbach;W. Knolle
测定了在不同射频功率下沉积的等离子体沉积非晶氮化硅氢合金（a-SiN:H）的电性能。使用傅里叶变换红外光谱仪测定这些薄膜的 N-H 和 Si-H 含量。 N-H含量对沉积条件相对不敏感；然而，Si-H含量对沉积条件非常敏感。研究发现薄膜的电导率取决于 Si–H 含量 [Si–H]，在 70°C 和 4×106 V/cm 下由 σ=7.25×10−21 exp(2.74×10−21[Si–H]) 给出。高温活化能（即陷阱高度）也强烈依赖于 Si-H 含量。提出了一个模型来定性地解释薄膜的电学行为。该材料被认为是两相混合物：第 1 相是高度结构化的（类 Si3N4），具有低水平的缺陷和低氢含量；第 2 相高度无序，具有高浓度的 Si-H 和 N-H 缺陷态以及高氢含量...
The electrical properties of plasma‐deposited amorphous silicon nitride hydrogen alloys (a‐SiN: H) deposited at different rf powers were determined. The N–H and Si–H content of these films were determined using a Fourier transform infrared spectrometer. The N–H content was relatively insensitive to the deposition conditions; however, the Si–H content was very sensitive to the deposition conditions. The conductivity of the films was found to depend upon the Si–H content [Si–H] and was given by σ=7.25×10−21 exp(2.74×10−21[Si–H]) at 70 °C and 4×106 V/cm. The high‐temperature activation energy (i.e., trap height) was also strongly dependent on the Si–H content. A model is proposed which qualitatively explains the electrical behavior of the films. The material is considered to be a two‐phase mixture: Phase 1 is highly structured (Si3N4‐like) which has a low level of defects, and a low hydrogen content; Phase 2 is highly disordered with a high concentration of Si–H and N–H defect states and a high hydrogen cont...