Optoelectronic Properties of Low-Bandgap Halide Perovskites for Solar Cell Applications
Optoelectronic Properties of Low-Bandgap Halide Perovskites for Solar Cell Applications
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DOI：
10.1002/adma.202102300
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发表时间：
2021-08-25
影响因子：
29.4
通讯作者：
Stranks, Samuel D.
中科院分区：
文献类型：
--
作者：
Dey, Krishanu;Roose, Bart;Stranks, Samuel D.
随着单结卤化物钙钛矿太阳能电池的快速发展，全钙钛矿多结太阳能电池最近受到了广泛关注，其最高功率转换效率已达到25.6%。这种进展很大程度上是由于低带隙卤化物钙钛矿吸收材料的光电性能的迅速提高，到目前为止，这种材料只能通过部分或完全用锡代替铅来实现。然而，对于这些低带隙钙钛矿的关键材料性质，仍有很大的发展空间。本文讨论了这些含锡钙钛矿的吸收、载流子产生、重组和输运等关键光电性能，表明本征掺杂明显影响了这些性能，从而使这类卤化物钙钛矿在家族中独一无二。总结了目前对这些材料和相应器件中光电性能下降机制的理解。这些共同的结果突出了掺杂、缺陷和降解之间的重要相互作用，需要加以控制。最后，概述了目前对这些低带隙钙钛矿的理解差距，从而为进一步研究提供指导，这将释放其实现大量高性能光电器件的全部潜力。
Riding on the coat tails of rapid developments in single-junction halide perovskite solar cells, all-perovskite multijunction solar cells have recently garnered significant attention, with the highest power-conversion efficiency already reaching 25.6%. Much of this progress has been fueled by the rapid rise in the photovoltaic performance of low-bandgap halide perovskite absorbers, materials, which, to date, have only been achievable by the partial or complete substitution of lead with tin. However, much room still exists to develop a more critical understanding of key material properties in these low-bandgap perovskites. Herein, the key optoelectronic properties of absorption, carrier generation, recombination, and transport in these tin-containing perovskites are discussed, showing that intrinsic doping distinctively impacts many of these properties, thereby rendering this class of halide perovskites unique within the family. Current understanding of the mechanisms that degrade optoelectronic performance in these materials and the corresponding devices are also summarized. These collective results highlight an important interplay between doping, defects, and degradation that will need to be controlled. Finally, the current gaps in understanding of these low-bandgap perovskites are outlined, thereby providing guidelines for further research, which will unlock their full potential for realizing a plethora of high-performance optoelectronic devices.