Large-Scale Polarization-Insensitive Silicon Photonic MEMS Switches
Large-Scale Polarization-Insensitive Silicon Photonic MEMS Switches
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DOI：
10.1109/jlt.2018.2791502
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发表时间：
2018-05
影响因子：
4.7
通讯作者：
Sangyoon Han;T. J. Seok;Kyoungsik Yu;N. Quack;R. Muller;Ming C. Wu
中科院分区：
文献类型：
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作者：
Sangyoon Han;T. J. Seok;Kyoungsik Yu;N. Quack;R. Muller;Ming C. Wu
我们报告了具有降低的偏振依赖性的 50 × 50 硅光子微机电系统 (MEMS) 开关。这些开关利用两级波导交叉开关和 MEMS 驱动的绝热耦合器。仿真表明，通过消除所有偏振相关元件（例如波导交叉点），可以实现低偏振相关损耗 (<1 dB)。通过粘合两个绝缘体上硅晶圆制造了实验原型开关。测得偏振相关损耗为 8.5 dB，偏振相关延迟为 44 ps。两种偏振的消光比均大于 40 dB。通过改进制造，两种偏振都有可能实现 <2 dB 的片上总损耗。
We report on 50 × 50 silicon photonic micro-electromechanical-system (MEMS) switches with reduced polarization dependence. The switches make use of two-level waveguide crossbars and MEMS-actuated adiabatic couplers. Simulations indicate that by eliminating all polarization-dependent elements (e.g., waveguide crossings), low polarization-dependent losses (<1 dB) can be realized. An experimental prototype switch was fabricated by bonding two silicon-on-insulator wafers. A polarization-dependent loss of 8.5 dB and a polarization-dependent delay of 44 ps were measured. The extinction ratios are greater than 40 dB for both polarizations. With improved fabrication, total on-chip loss <2 dB can potentially be achieved for both polarizations.