Selective area growth of in-plane InAs nanowires and nanowire networks on Si substrates by molecular-beam epitaxy
Selective area growth of in-plane InAs nanowires and nanowire networks on Si substrates by molecular-beam epitaxy
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DOI：
10.1088/1361-6528/ad0b1f
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发表时间：
2023-11
期刊：
影响因子：
3.5
通讯作者：
Lei Liu;Lianjun Wen;Fengyue He;Ran Zhuo;D. Pan;Jianhua Zhao
中科院分区：
文献类型：
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作者：
Lei Liu;Lianjun Wen;Fengyue He;Ran Zhuo;D. Pan;Jianhua Zhao
平面内InAs纳米线和纳米线网络显示出作为电子、光电和拓扑量子器件的构建模块的巨大潜力，所有这些应用都热衷于在Si衬底上直接生长InAs材料，因为它可以使纳米线电子和量子器件与Si平台无缝集成。然而，几乎所有的平面内InAs纳米线和纳米线网络都是在III-V半导体衬底上实现的。在这里，我们展示了平面内InAs纳米线和纳米线网络在Si衬底上的选择性区域外延生长。我们发现，InAs在Si衬底上生长的选择性主要取决于生长温度，而InAs纳米线的形貌与V/III通量比密切相关。我们研究了沿< 110 >,< 100 >和< 112 >方向生长的InAs纳米线的横截面形状和切面。由于Si衬底的非极性特性，与生长在III-V衬底上的纳米线和纳米线网络相比，InAs纳米线和纳米线网络具有更好的对称性。InAs纳米线和纳米线网络是锌-闪锌矿（ZB）晶体，但纳米线中存在层错、孪晶和晶界等缺陷。在生长温度窗内提高生长温度可以改善InAs纳米线和纳米线网络的晶体质量。我们的工作证明了平面内InAs纳米线和纳米线网络在Si衬底上选择性区域外延生长的可行性。
In-plane InAs nanowires and nanowire networks show great potential to be used as building blocks for electronic, optoelectronic and topological quantum devices, and all these applications are keen to grow the InAs materials directly on Si substrates since it may enable nanowire electronic and quantum devices with seamless integration with Si platform. However, almost all the in-plane InAs nanowires and nanowire networks have been realized on substrates of III–V semiconductors. Here, we demonstrate the selective area epitaxial growth of in-plane InAs nanowires and nanowire networks on Si substrates. We find that the selectivity of InAs growth on Si substrates is mainly dependent on the growth temperature, while the morphology of InAs nanowires is closely related to the V/III flux ratio. We examine the cross-sectional shapes and facets of the InAs nanowires grown along the 〈110〉, 〈100〉 and 〈112〉 orientations. Thanks to the non-polar characteristics of Si substrates, the InAs nanowires and nanowire networks exhibit superior symmetry compared to that grown on III–V substrates. The InAs nanowires and nanowire networks are zinc-blende (ZB) crystals, but there are many defects in the nanowires, such as stacking faults, twins and grain boundaries. The crystal quality of InAs nanowires and nanowire networks can be improved by increasing the growth temperature within the growth temperature window. Our work demonstrates the feasibility of selective area epitaxial growth of in-plane InAs nanowires and nanowire networks on Si substrates.