Charge Transfer Complexation of Ta-Encapsulating Ta@Si16 Superatom with C60
Charge Transfer Complexation of Ta-Encapsulating Ta@Si16 Superatom with C60
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DOI：
10.1021/acs.jpcc.6b04955
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发表时间：
2016-07
影响因子：
3.7
通讯作者：
Tsutomu Ohta;M. Shibuta;H. Tsunoyama;T. Eguchi;A. Nakajima
中科院分区：
文献类型：
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作者：
Tsutomu Ohta;M. Shibuta;H. Tsunoyama;T. Eguchi;A. Nakajima
包裹着Ta@Si16的笼状Si16纳米团簇超原子是构建纳米团簇功能材料的一种很有前途的候选材料。用X射线和紫外光电子能谱(XPS和UPS)对沉积在电子可接受的C60富勒烯薄膜上的Ta@Si16的化学状态进行了评价。Si、Ta和C的XPS结果表明，Ta@Si16与单个C60分子结合形成了(Ta@Si16)+C60-超原子电荷转移(CT)络合物。热处理和氧气暴露前后的XPS和UPS测量表明，超原子CT复合体具有很高的热稳定性和化学稳定性。即使加热到720K或在常压氧气中，Ta@Si16仍保持其原始骨架，形成Ta@Si16超原子的氧化物。
The tantalum-encapsulating Si16 cage nanocluster superatom (Ta@Si16) has been a promising candidate for a building block of nanocluster-based functional materials. Its chemical states of Ta@Si16 deposited on an electron acceptable C60 fullerene film were evaluated by X-ray and ultraviolet photoelectron spectroscopies (XPS and UPS, respectively). XPS results for Si, Ta, and C showed that Ta@Si16 combines with a single C60 molecule to form the superatomic charge transfer (CT) complex, (Ta@Si16)+C60–. The high thermal and chemical robustness of the superatomic CT complex has been revealed by the XPS and UPS measurements conducted before and after heat treatment and oxygen exposure. Even when heated to 720 K or subjected to ambient oxygen, Ta@Si16 retained its original framework, forming oxides of Ta@Si16 superatom.