Ultrasonic-assisted anodic oxidation of 4H-SiC (0001) surface
Ultrasonic-assisted anodic oxidation of 4H-SiC (0001) surface
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DOI：
10.1016/j.elecom.2019.01.012
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发表时间：
2019-03-01
影响因子：
5.4
通讯作者：
Yamamura, Kazuya
中科院分区：
文献类型：
--
作者：
Yang, Xiaozhe;Yang, Xu;Yamamura, Kazuya
提出了一种超声振动与电化学机械抛光相结合的超声辅助电化学机械抛光（UAECMP）技术。研究了超声振动对4H-SiC（0001）表面阳极氧化速率的影响，证实了超声振动显著增强了SiC的阳极氧化。与常规阳极氧化相比，超声辅助（UA）在初始氧化阶段的氧化速率提高了约34%，在后续阳极氧化阶段的氧化速率提高了约11%。此外，由于氧化层的多孔结构，随着氧化时间的增加，氧化可以不断地促进。UAECMP作为一种高效的SiC表面处理技术，具有广阔的应用前景。
An ultrasonic-assisted electrochemical mechanical polishing (UAECMP) technique that combines ultrasonic vibration and electrochemical mechanical polishing (ECMP) is proposed. The effect of ultrasonic vibration on the anodic oxidation rate of a 4H-SiC (0001) surface was studied, and it was confirmed that ultrasonic vibration significantly enhanced the anodic oxidation of SiC. Compared with conventional anodic oxidation, the oxidation rate increased by about 34% with ultrasonic assistance (UA) in the initial oxidation stage, and by about 11% during subsequent anodic oxidation. In addition, the oxidation can be promoted continuously with increasing oxidation time owing to the porous structure of the oxide layer. UAECMP is very promising as an efficient finishing technique for SiC surfaces.