All-optical memory operation of 980-nm polarization bistable VCSEL for 20-Gb/s PRBS RZ and 40-Gb/s NRZ data signals.
All-optical memory operation of 980-nm polarization bistable VCSEL for 20-Gb/s PRBS RZ and 40-Gb/s NRZ data signals.
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DOI：
10.1364/oe.18.012362
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发表时间：
2010-06
期刊：
影响因子：
3.8
通讯作者：
J. Sakaguchi;T. Katayama;H. Kawaguchi
中科院分区：
文献类型：
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作者：
J. Sakaguchi;T. Katayama;H. Kawaguchi
使用980 nm偏振垂直腔面发射激光器（VCSEL）实验证明了全光触发器存储器的最快已知操作。实验研究了实现快速光存储的输入信号功率和频率失谐条件。在最佳条件下，利用偏振双稳性获得的与门和存储功能，从20 Gb/s的2（6）-1伪随机比特序列归零信号中任意采样并存储1比特数据信号。此外，在40 Gb/s时，对于6位不归零信号实现了1位存储操作。两种存储器操作都需要250微瓦的数据信号功率，并具有光增益。基于偏振互锁VCSEL的全光触发器存储器在未来超快全光网络中具有巨大的应用潜力。
The fastest known operation of all-optical flip-flop memory was experimentally demonstrated using a 980-nm polarization bistable vertical-cavity surface-emitting laser (VCSEL). Operating conditions of the input signal power and the frequency detuning to achieve the fast optical memory operation were characterized experimentally. At the optimum condition, 1-bit data signals were arbitrarily sampled and memorized from a 2(6)-1 pseudorandom bit sequence return-to-zero signal at 20 Gb/s by using AND gate and memory functionalities obtained from the polarization bistability. In addition, 1-bit memory operation was achieved for a 6-bit non-return-to-zero signal at 40 Gb/s. Both memory operations required 250-microW data signal power and had optical gain. The high potential of all-optical flip-flop memories based on polarization bistable VCSELs for use in ultrafast all-optical future networks was demonstrated.