Precise fabrication of uniform sub-10-nm-diameter cylindrical silicon nanopillars via oxidation control
Precise fabrication of uniform sub-10-nm-diameter cylindrical silicon nanopillars via oxidation control
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DOI：
10.1016/j.scriptamat.2021.113818
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发表时间：
2021-06
影响因子：
6
通讯作者：
S. Ye;K. Yamabe;T. Endoh
中科院分区：
文献类型：
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作者：
S. Ye;K. Yamabe;T. Endoh
根据国际器件和系统路线图，基于硅（Si）纳米柱（NP）的全包围栅金属氧化物半导体场效应晶体管（MOSFET）被认为是下一代集成电路的主要组件。为了用目前使用的几纳米技术节点取代鳍式结构MOSFET，需要一种精确的制造方法来制造直径小于10 nm的圆柱形均匀硅纳米颗粒。本研究首次证明了双氧化工艺能够解决这一问题。特别地，其包括在900°C下的第一氧化，其中深度自限制氧化用于形状控制和方差减小，以及在1000°C下的第二氧化，其中可控氧化速率用于精确的直径控制，其中在两次氧化之间进行湿法蚀刻。虽然硅的氧化是取向依赖性的，实验证实，横向截面的硅纳米粒子在氧化过程中保持一个圆形的形状，并在理论上归因于边缘效应。
Silicon (Si) nanopillar (NP)-based gate-all-around metal–oxide–semiconductor field-effect transistors (MOSFETs) are considered the primary components of next-generation integrated circuits according to theInternational Roadmap of Devices and Systems. In order to replace fin-structured MOSFETs with a several-nanometer technology node that is currently used, a precise fabrication method for uniform Si NPs with a sub-10-nm diameter and cylindrical shape is required. This study demonstrates that a double-oxidation process is capable of solving this problem for the first time. In particular, it includes the first oxidation at 900°C with deep self-limiting oxidation for shape control and variance decrease and second oxidation at 1000°C with a controllable oxidation rate for precise diameter control, with wet etching between two oxidations. Although Si oxidation is orientation dependent, the traverse cross-section of Si NPs is experimentally confirmed to keep a circle shape during oxidation and is theoretically attributed to the edge effect.