An Electrical Model of Hydrocephalus Shunt Incorporating the CSF Dynamics
An Electrical Model of Hydrocephalus Shunt Incorporating the CSF Dynamics
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DOI：
10.1038/s41598-019-46328-z
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发表时间：
2019-07-05
影响因子：
4.6
通讯作者：
Baghbani, R.
中科院分区：
文献类型：
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作者：
Baghbani, R.
脑脊液在脑室和蛛网膜下腔的积聚称为脑积水。脑积水是脑脊液分泌或吸收过程紊乱的结果。脑积水分流术是治疗脑积水的有效方法。本文首先研究了脑脊液的分泌、循环和吸收过程，然后讨论了控制大脑不同相互作用的脑室内压力的数学关系。提出了一种基于脑生理和血液循环的机电模型。在所提出的模型中，脑积水用递增阻力(R-0)来模拟，脑积水分流是用二极管串联的电阻来模拟的，它是一种将积聚在脑室中的脑脊液排出的低阻路径。最后给出了仿真结果。模拟结果可用于在患者体内实施真正的分流手术之前，预测降低脑脊液压力的分流效率。
The accumulation of cerebrospinal fluid (CSF) in brain ventricles and subarachnoid space is known as hydrocephalus. Hydrocephalus is a result of disturbances in the secretion or absorption process of CSF. A hydrocephalus shunt is an effective method for the treatment of hydrocephalus. In this paper, at first, the procedures of secretion, circulation, and absorption of CSF are studied and subsequently, the mathematical relations governing the pressures in different interacting compartments of the brain are considered. A mechanical-electrical model is suggested based on the brain physiology and blood circulation. In the proposed model, hydrocephalus is modeled with an incremental resistance (R-0) and hydrocephalus shunt, which is a low resistance path to drain the accumulated CSF in the brain ventricles, is modeled with a resistance in series with a diode. At the end, the simulation results are shown. The simulation results can be used to predict the shunt efficiency in reducing CSF pressure and before a real shunt implementation surgery is carried out in a patient's body.