Information-Theoretic Sneak-Path Mitigation in Memristor Crossbar Arrays
Information-Theoretic Sneak-Path Mitigation in Memristor Crossbar Arrays
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DOI：
10.1109/tit.2016.2594798
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发表时间：
2016-09
影响因子：
2.5
通讯作者：
Yuval Cassuto;Shahar Kvatinsky;Eitan Yaakobi
中科院分区：
文献类型：
--
作者：
Yuval Cassuto;Shahar Kvatinsky;Eitan Yaakobi
在用作存储器阵列的忆阻器交叉开关阵列中，忆阻器位于每个行-列交叉点上，其电阻低或高代表两种逻辑状态。每个忆阻器的状态都可以通过流经该忆阻器的电流来检测。在本文中，我们研究了交叉开关阵列中的潜行路径问题，在该问题中，电流可能偷偷流过其他单元，导致读出记忆阻器的错误状态。我们的主要贡献是对潜行路径引起的错误信道进行了建模，给出了阵列无潜行路径的新表征，以及避免潜行路径的读取阵列单元的有效方法。对于每种读取方法，我们匹配保证无潜行路径读出的数组内容的约束，确定所产生的容量，并提供达到该容量的高效编码器。
In a memristor crossbar array, functioning as a memory array, a memristor is positioned on each row-column intersection, and its resistance, low or high, represents two logical states. The state of every memristor can be sensed by the current flowing through the memristor. In this paper, we study the sneak path problem in crossbar arrays, in which current can sneak through other cells, resulting in reading a wrong state of the memristor. Our main contributions are modeling the error channel induced by sneak paths, a new characterization of arrays free of sneak paths, and efficient methods to read the array cells while avoiding sneak paths. To each read method, we match a constraint on the array content that guarantees sneak-path free readout, determine the resulting capacity, and provide an efficient encoder that achieves the capacity.