Improved field emission characteristics of individual carbon nanotube coated with boron nitride nanofilm
Improved field emission characteristics of individual carbon nanotube coated with boron nitride nanofilm
复制标题
氮化硼纳米膜涂覆的单个碳纳米管的场发射特性得到改善
DOI：
10.1116/1.2822990
复制
发表时间：
2008
影响因子：
1.4
通讯作者：
T. Sugino
中科院分区：
文献类型：
--
作者：
Y. Morihisa;C. Kimura;M. Yukawa;H. Aoki;Takumi Kobayashi;S. Hayashi;S. Akita;Y. Nakayama;T. Sugino
采用电弧放电法合成了一个单独的多壁碳纳米管（CNT）。研究了氮化硼（BN）纳米膜包覆碳纳米管的场发射特性。以三氯化硼（BCl3）和氮气（N2）为源气体，采用等离子体辅助化学气相沉积法合成了氮化硼薄膜。尝试在单个碳纳米管上沉积厚度小于10nm的氮化硼薄膜。在真空至2×10−8Pa的腔室中测量场发射特性。阳极电极距碳纳米管样品25mm。将单个碳纳米管的导通电场（指定为发射电流为1.0nA的电场）与未制备BN纳米膜的碳纳米管进行比较。通过涂覆氮化硼纳米膜，可以显著降低导通电场。对于未涂覆的单个碳纳米管样品，其导通电场估计为1.2×10−2V∕μm，导通电场的值为±2。
An individual multiwall carbon nanotube (CNT) synthesized without a catalyst by an arc discharge method is bonded to a tungsten tip. Field emission characteristics of the individual CNT coated with a boron nitride (BN) nanofilm are investigated. The BN film is synthesized by plasma-assisted chemical vapor deposition method in which boron trichloride (BCl3) and nitrogen (N2) are used as source gases. Deposition of the BN film with a thickness less than 10nm onto the individual CNT is attempted. Field emission characteristics are measured in the chamber evacuated to 2×10−8Pa. An anode electrode is set 25mm away from the CNT sample. The turn-on electric field, designated as an electric field at an emission current of 1.0nA, is compared between individual CNTs with and without the BN nanofilm. A significant reduction in the turn-on electric field is achieved by coating with the BN nanofilm. The turn-on electric field is estimated to be 1.2×10−2V∕μm for the uncoated individual CNT sample, and the turn-on elect...