Synthesis of high-density arrays of graphene nanoribbons by anisotropic metal-assisted etching
Synthesis of high-density arrays of graphene nanoribbons by anisotropic metal-assisted etching
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DOI：
10.1016/j.carbon.2014.07.010
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发表时间：
2014-11
期刊：
影响因子：
10.9
通讯作者：
H. Ago;Yasumichi Kayo;P. Solís-Fernández;Kazuma Yoshida;M. Tsuji
中科院分区：
文献类型：
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作者：
H. Ago;Yasumichi Kayo;P. Solís-Fernández;Kazuma Yoshida;M. Tsuji
我们展示了基于金属辅助蚀刻化学气相沉积单层石墨烯的高度排列致密石墨烯纳米带（gnr）阵列的合成。为了获得GNR阵列，控制蚀刻方向成为一个重要的任务。蓝宝石（α-Al2O3）的r面和a面晶体表面沿其特定的晶体方向诱导石墨烯的各向异性刻蚀。相比之下，st切割石英的各向异性表面产生的蚀刻线较少。我们发现石墨烯蚀刻与金属种类密切相关；金属纳米颗粒的催化活性大小依次为Ni > Fe > > Cu。蚀刻温度和h2o2浓度对蚀刻线的密度和质量也有很大影响。我们的各向异性石墨烯蚀刻有望为未来的电子设备提供一种不依赖于任何光刻技术的大面积高密度GNR阵列合成的新途径。
We demonstrate the synthesis of highly aligned dense arrays of graphene nanoribbons (GNRs) based on metal-assisted etching of chemical vapor deposition-grown single-layer graphene. In order to obtain GNR arrays, controlling the direction of the etching becomes an important task. Crystalline surfaces of r- and a-planes of sapphire (α-Al2O3) were found to induce anisotropic etching of the graphene along their specific crystallographic directions. In contrast, anisotropic surface of ST-cut quartz induced few etching lines. We found that the graphene etching is strongly dependent on the metal species; the order of the catalytic activity of metal nanoparticles is Ni > Fe > > Cu. Etching temperature and H2concentration also strongly influenced the density and quality of the etching lines. Our anisotropic graphene etching is expected to offer a new route toward the synthesis of high density GNR array in large area without relying on any lithographic techniques for future electronic devices.