Frequency tunable optoelectronic oscillator based on a directly modulated DFB semiconductor laser under optical injection.
Frequency tunable optoelectronic oscillator based on a directly modulated DFB semiconductor laser under optical injection.
复制标题
DOI:
10.1364/oe.23.020450
复制
发表时间:
2015-08
期刊:
影响因子:
3.8
通讯作者:
Peng Wang;Jintian Xiong;Tingting Zhang;Dalei Chen;P. Xiang;Jiling Zheng;Yunshan Zhang;Ruoming Li-Ruoming
中科院分区:
文献类型:
--
作者:
Peng Wang;Jintian Xiong;Tingting Zhang;Dalei Chen;P. Xiang;Jiling Zheng;Yunshan Zhang;Ruoming Li-Ruoming
A frequency tunable optoelectronic oscillator based on a directly modulated distributed-feedback (DFB) semiconductor laser under optical injection is proposed and experimentally demonstrated. Through optical injection, the relaxation oscillation frequency of the DFB laser is enhanced and its high modulation efficiency can enable the loop oscillation with a RF threshold gain of less than 20 dB. The DFB laser is a commercial semiconductor laser with a package of 10 GHz, and its packaging limitation can be overcome by optical injection. In our scheme, neither a high-speed external modulator nor an electrical bandpass filter is required, making the system simple and low-cost. Microwave signals with a frequency tuning range from 5.98 to 15.22 GHz are generated by adjusting the injection ratio and frequency detuning between the master and slave lasers. The phase noise of the generated 9.75 GHz microwave signal is measured to be -104.8 dBc/Hz @ 10 kHz frequency offset.