Subpicosecond, freely propagating electromagnetic pulse generation and detection using GaAs:As epilayers
Subpicosecond, freely propagating electromagnetic pulse generation and detection using GaAs:As epilayers
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使用 GaAs:As 外延层产生和检测亚皮秒、自由传播的电磁脉冲
DOI：
10.1063/1.105162
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发表时间：
1991
影响因子：
4
通讯作者：
N. Ōtsuka
中科院分区：
文献类型：
--
作者：
A. C. Warren;N. Katzenellenbogen;D. Grischkowsky;J. Woodall;M. Melloch;N. Ōtsuka
在宽带太赫兹光电子束系统中，使用砷沉淀GaAs外延层（GaAs：As）作为光导材料，我们产生并探测了自由传播的亚皮秒电磁脉冲。接收器信号给出0.71 ps的测量积分脉冲宽度。快速的光电导上升时间已经实现，这是良好的迁移率GaAs的特征。此外，该材料表现出一个短的“有效”载流子寿命的几个ps由于嵌入式，紧密间隔（约20 nm）的砷沉淀。
Using GaAs epilayers with arsenic precipitates (GaAs:As) as the photoconductive material in a broad‐band optoelectronic terahertz beam system, we have generated and detected freely propagating, subpicosecond electromagnetic pulses. The receiver signal gave a measured integrated pulse width of 0.71 ps. Fast photoconductive rise times have been achieved which are characteristic of good mobility GaAs. In addition, the material exhibits a short ‘‘effective’’ carrier lifetime of several ps due to the embedded, closely spaced (about 20 nm) arsenic precipitates.