Boronization with trimethylboron in the reversed field pinch RFX
Boronization with trimethylboron in the reversed field pinch RFX
复制标题
在反向场箍缩 RFX 中用三甲基硼进行硼化
DOI：
10.1016/0022-3115(95)00161-1
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发表时间：
1996
影响因子：
3.1
通讯作者：
S. Zandolin
中科院分区：
文献类型：
--
作者：
P. Sonato;V. Antoni;W. Baker;R. Bertoncello;A. Buffa;L. Carraro;S. Costa;G. D. Mea;L. Marrelli;A. Murari;M. Puiatti;V. Rigato;P. Scarin;L. Tramontin;M. Valisa;S. Zandolin
在He中加入12.5%的三甲基硼（(CH3)3B）的混合物，通过辉光放电清洗，将反场挤压RFX的第一壁和容器原位涂覆B/C:H膜。对膜进行了分析，并报道了在520 kA等离子体电流下，渗硼壁对等离子体放电的影响。对等离子体的主要影响是氧含量减少5到10倍，碳含量减少2倍。泽夫从2-2.5降低到1.4-1.5。观察到回路电压略有降低。随着能量约束时间τE的极向β βϑand的增加，辐射功率降低了2倍，提高了高密度运行极限。
The first wall and the vessel of the Reversed Field Pinch RFX has been in situ coated with a B/C:H film by glow discharge cleaning with a mixture of 12.5% of trimethylboron ((CH3)3B) in He. The film has been analysed and the effects on the plasma discharges of the boronized wall are reported for a plasma current of 520 kA. The main effects on the plasma are a reduction in the oxygen content by a factor of 5 to 10 and a decrease in the carbon content by a factor of two. The Zeffhas been reduced from 2–2.5 to 1.4–1.5. A slight reduction of the loop voltage is observed. The radiation power decreases by a factor of 2, enhancing the high density operation limit with a consequent increase of the poloidal beta βϑand of the energy confinement time τE.