Precise determination of band offsets and chemical states in SiN∕Si studied by photoemission spectroscopy and x-ray absorption spectroscopy
Precise determination of band offsets and chemical states in SiN∕Si studied by photoemission spectroscopy and x-ray absorption spectroscopy
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DOI：
10.1063/1.2035894
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发表时间：
2005-08
影响因子：
4
通讯作者：
S. Toyoda;J. Okabayashi;H. Kumigashira;M. Oshima;G. L. Liu;Zhi Liu;K. Ikeda;K. Usuda
中科院分区：
文献类型：
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作者：
S. Toyoda;J. Okabayashi;H. Kumigashira;M. Oshima;G. L. Liu;Zhi Liu;K. Ikeda;K. Usuda
我们研究了化学状态和能带偏移的SiN scinSi的光电子能谱和X射线吸收光谱。用单组分拟合了三种层厚的SiN薄膜的N1s光电子能谱，表明第一和第二近邻的氮原子分别被三个硅原子和九个氮原子包围。SiN和Si衬底之间的价带偏移被确定为1.6 eV，使用价带谱减去Si衬底的贡献。从价带、N1s芯能级和NK边吸收谱估算出SiN的带隙为5.6- 5.7eV。此外，N1s光电子能谱的随时间变化的测量结果表明，X射线照射时间是一个重要的因素，以确定精确的价带偏移不包括差分充电效应。
We have investigated chemical states and band offsets in SiN∕Si by photoemission spectroscopy and x-ray absorption spectroscopy. N1s photoemission spectra in SiN for three kinds of layer-thickness films are fitted by a single component, suggesting that a nitrogen atom is surrounded by three silicon and nine nitrogen atoms for the first and the second nearest neighbor, respectively. Valence-band offsets between SiN and the Si substrates are determined to be 1.6 eV using valence-band spectra by subtracting the contribution from Si substrates. Band gap of SiN is estimated to be 5.6–5.7 eV from valence-band, N1s core level, and NK-edge-absorption spectra. Furthermore, time-dependent measurements of N1s photoemission spectra reveal that the x-ray irradiation time is a significant factor to determine the precise valence-band offsets excluding the differential charging effects.