GaAsP nanowires containing intentional and self-forming quantum dots
GaAsP nanowires containing intentional and self-forming quantum dots
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DOI：
10.1117/12.2543747
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发表时间：
2020-03
期刊：
影响因子：
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通讯作者：
H. Fonseka;A. Velichko;Yunyan Zhang;G. Davis;James A. Gott;T. Godde;A. Sánchez;R. Beanland;
中科院分区：
文献类型：
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作者：
H. Fonseka;A. Velichko;Yunyan Zhang;G. Davis;James A. Gott;T. Godde;A. Sánchez;R. Beanland;
由一系列不同异质结构组成的GaAsP纳米线(NWS)被认为是一种非常有前途的系统，可以用来制造高效和新颖的超小发光器件。由于具有较大的电子和空穴限制势，含砷化镓径向量子阱(QW)的NW具有很高的热稳定性。一个包含三个量子线的结构在低温下表现出很低的阈值激光。在同一NW的GaAsP中心区内，观察到在六个顶点中的三个顶点上形成了量子线，这些QWR平行于NW轴排列。孪晶的存在导致晶体绕生长轴旋转180°，将量子阱分成几个小段，可能起到量子点的作用。对原子核的光学研究支持光学活性量子点和量子点的形成。在第二种类型的NW中，在GaAsP NW芯的生长过程中，引入较短的GaAs截面形成量子点。高达50个具有高结构和光学质量的量子点被证明是可能的；这表明了制造量子点激光器的潜力。只有一个量子点的结构表现出单一的尖锐发射线和与单激子复合一致的行为。添加钝化层是获得良好光学性能的关键，钝化层以壳的形式生长在NW芯上。因此，我们的研究表明，含有异质结构的GaAsP-GaAsNW在一系列新的发光应用方面具有巨大的潜力。
GaAsP nanowires (NWs) containing a range of different heterostructures are shown to be a highly promising system for the fabrication of efficient and novel ultra-small light emitters. NWs containing GaAs radial quantum wells (QWs) have emission with high thermal stability, due to both large electron and hole confinement potentials. A structure containing three QWs exhibits very low threshold lasing at low temperatures. Within the GaAsP central region of the same NW, the formation of quantum wires (QWRs) on three of the six vertices is observed, these QWRs are aligned parallel to the NW axis. The presence of twins causes a 180° rotation of the crystal about the growth axis, breaking the QWRs into short sections which may act as quantum dots (QDs). Optical studies of the NWs support the formation of optically active QWRs and QDs. In a second type of NW, during growth of the GaAsP NW core the introduction of a short GaAs section forms a QD. The inclusion of up to 50 QDs with high structural and optical quality is shown to be possible; indicating the potential for the fabrication of QD lasers. A structure with only one QD exhibits a single sharp emission line and behavior consistent with single exciton recombination. The addition of passivation layers, grown as a shell on the NW core, is shown to be essential in obtaining good optical properties. Our studies hence demonstrate that GaAsP-GaAs NWs containing heterostructures have significant potential for a range of novel light emitting applications.