Horizontal growth of epitaxial (100) β-FeSi2 templates by metal-organic chemical vapor deposition
Horizontal growth of epitaxial (100) β-FeSi2 templates by metal-organic chemical vapor deposition
复制标题
DOI：
10.1016/j.jcrysgro.2005.10.097
复制
发表时间：
2006-01-25
影响因子：
1.8
通讯作者：
Funakubo, H
中科院分区：
文献类型：
--
作者：
Akiyama, K;Kaneko, S;Funakubo, H
以聚集态的β-FeSi2为模板，采用金属-有机化学气相沉积方法在(100)Si衬底上生长了连续平坦的外延β-FeSi2薄膜。在金属-有机化学气相沉积(MOCVD)-过生长过程中，聚集态的β-FeSi2模板上的水平生长使岛之间的空洞变小，成为连续的薄膜。侧壁上的生长速率高于(100)β-FeSi2面上的生长速率，这被认为是水平生长的原因。(C)2005 Elsevier B.V.保留所有权利。
An epitaxial beta-FeSi2 thin film with continuous flat surface was grown by metal-organic chemical vapor deposition on (100) Si substrate with an aggregated beta-FeSi2 template. The horizontal growth on the aggregated beta-FeSi2 template made smaller voids among islands and became the continuous film in metal-organic chemical vapor deposition (MOCVD)-overgrowth process. The higher growth rate on the sidewall planes than on the (100) beta-FeSi2 plane is considered to be the origin of the horizontal growth. (c) 2005 Elsevier B.V. All rights reserved.