Optimization of pretreatment of GaP substrates for molecular beam epitaxy of ZnS-based materials
Optimization of pretreatment of GaP substrates for molecular beam epitaxy of ZnS-based materials
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ZnS基材料分子束外延GaP衬底预处理的优化
DOI：
10.1002/1521-3951(200201)229:1
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发表时间：
2002
影响因子：
1.6
通讯作者：
H. Kobayashi
中科院分区：
文献类型：
--
作者：
K. Ichino;T. Nishikawa;F. Kawakami;T. Kosugi;M. Kitagawa;H. Kobayashi
研究了ZnS基材料分子束外延用GaP衬底的预处理条件。在无硫环境下，用P或/和Zn分子束辐照或不辐照GaP衬底进行氧化物去除。研究了束流辐照和生长温度对ZnS外延层初始生长模式和结晶质量的影响。结果表明，在350-450 °C的生长温度下，在P和Zn辐照的衬底上生长的ZnS外延层表现出准二维成核和良好的结晶质量。
We have investigated pretreatment conditions of GaP substrates for molecular beam epitaxy of ZnS-based materials. Oxide removal of GaP substrates was carried out with or without irradiation of P or/and Zn molecular beams under S-free environment. The effects of the beam irradiation and the growth temperature on the initial growth mode and crystalline quality of ZnS epitaxial layers were studied. It was shown that the ZnS epitaxial layers grown on the P- and Zn-irradiated substrates at the growth temperatures of 350-450 °C show quasi-two-dimensional nucleation and good crystalline quality.