Field-effect modulation of the transport properties of nondoped SrTiO3
Field-effect modulation of the transport properties of nondoped SrTiO3
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DOI：
10.1063/1.2207502
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发表时间：
2006-05
影响因子：
4
通讯作者：
K. Shibuya;T. Ohnishi;T. Uozumi;Taisuke Sato;M. Lippmaa;M. Kawasaki;K. Nakajima;T. Chikyow;H. Koinuma
中科院分区：
文献类型：
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作者：
K. Shibuya;T. Ohnishi;T. Uozumi;Taisuke Sato;M. Lippmaa;M. Kawasaki;K. Nakajima;T. Chikyow;H. Koinuma
我们用非晶态和外延CaHfO_3栅绝缘层制备了SrTiO_3(100)单晶场效应晶体管。具有非晶态绝缘层的器件表现出几乎与温度无关的行为。与非晶态器件相比，具有外延界面的晶体管有了很大的改善。场效应迁移率在低温下增大，在50K时达到35cm2/vs。这一结果表明，在电子掺杂的钛酸锶中，场效应在栅界面处积累的载流子表现出了预期的行为。在外延的SrTiO_3基晶体管中观察到由场效应掺杂引起的绝缘体-金属转变。
We have fabricated SrTiO3 (100) single crystal field-effect transistors with amorphous and epitaxial CaHfO3 gate insulator layers. The devices with amorphous insulator layers showed nearly temperature independent behavior. The transistors with epitaxial interfaces exhibited a large improvement over the amorphous devices. The field-effect mobility was found to increase at low temperature, reaching 35cm2∕Vs at 50K. This result shows that the carriers accumulated by the field effect on the SrTiO3 side of the gate interface behaved as would be expected for electron-doped SrTiO3. An insulator-metal transition, induced by field-effect doping, was observed in epitaxial SrTiO3-based transistors.