Identification of bound exciton complexes in ZnO
Identification of bound exciton complexes in ZnO
复制标题
ZnO 中束缚激子复合物的鉴定
DOI:
10.1002/pssb.200304187
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发表时间:
2004
期刊:
影响因子:
--
通讯作者:
B. Meyer
中科院分区:
文献类型:
--
作者:
M. Strassburg;A. Rodina;M. Dworzak;U. Haboeck;I. Krestnikov;A. Hoffmann;O. Gelhausen;M. Phillips;H. Alves;A. Zeuner;D. Hofmann;B. Meyer
An identification of shallow bound exciton centers in ZnO is presented based on magneto‐optical measurements and diffusion experiments. The thermalization behavior of the Zeeman split components confirms that the I4, I6, I8 and I9 exciton lines stem from donor bound exciton complexes. The results are supported by theoretical analysis of shallow bound exciton complexes revealing the Γ7 symmetry of the upper valence band. The presence of two‐electron satellites related to the respective transitions is further evidence for the donor bound complexes and enabled the determination of donor binding energies. Hydrogen, aluminum, gallium and indium were identified to origin the I4, I6, I8 and I9 lines by doping, diffusion and annealing experiments combined with photoluminescence and secondary ion mass spectrometry. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)