Origins of lasing emission in a resonance-controlled ZnO random laser
Origins of lasing emission in a resonance-controlled ZnO random laser
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DOI:
10.1088/1367-2630/16/9/093054
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发表时间:
2014-09-30
影响因子:
3.3
通讯作者:
Adachi, Sadao
中科院分区:
文献类型:
--
作者:
Nakamura, Toshihiro;Fujiwara, Hideki;Adachi, Sadao
We investigate the origins of lasing emission in a scatterer-resonance-controlled random laser made of ZnO nanopowder over a wide temperature range (20-300 K). At higher temperatures (> 150 K), the lasing emission appears around exciton recombination energies and the lasing threshold carrier density is comparable to the Mott density, indicating that the resonance-controlled random laser is going toward showing excitonic lasing; at lower temperatures, random lasing is caused by usual electron-hole plasma recombination because of the threshold carrier density being much larger than the Mott density.