Self-ordering of nanofacets on vicinal SiC surfaces
Self-ordering of nanofacets on vicinal SiC surfaces
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DOI：
10.1103/physrevlett.91.226107
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发表时间：
2003-11-28
影响因子：
8.6
通讯作者：
Suemune, I
中科院分区：
文献类型：
--
作者：
Nakagawa, H;Tanaka, S;Suemune, I
用原子力显微镜和截面高分辨透射电子显微镜研究了4 H和6 H-SiC（0001）邻面。我们观察到的特征自排序的纳米刻面在任何表面上，无论多型体和邻角，在高温下的气体蚀刻后。通常显示两个小平面：（0001）和高折射率（11（2）在谷仓），这是由平衡表面相分离引起的。一个（11（2）over barn）平面可能由于吸引的阶梯-阶梯相互作用而具有自由能最小值。4 H和6 H多型体中不同的有序距离意味着SiC多型体对纳米刻面的依赖性的存在。因此，应该可以通过选择多型体、邻位角和蚀刻温度来控制SiC表面纳米结构。
Vicinal 4H and 6H-SiC(0001) surfaces have been investigated using atomic force microscopy and cross-sectional high-resolution transmission electron microscopy. We observed the characteristic self-ordering of nanofacets on any surface, regardless of polytypes and vicinal angles, after gas etching at high temperature. Two facet planes are typically revealed: (0001) and high index (11 (2) over barn) that are induced by equilibrium surface phase separation. A (11 (2) over barn) plane may have a free energy minimum due to attractive step-step interactions. The differing ordering distances in 4H and 6H polytypes imply the existence of SiC polytypic dependence on nanofaceting. Thus, it should be possible to control SiC surface nanostructures by selecting a polytype, a vicinal angle, and an etching temperature.