Polarity effects in the x-ray photoemission of ZnO and other wurtzite semiconductors
Polarity effects in the x-ray photoemission of ZnO and other wurtzite semiconductors
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DOI：
10.1063/1.3562308
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发表时间：
2011-03-07
影响因子：
4
通讯作者：
Durbin, S. M.
中科院分区：
文献类型：
--
作者：
Allen, M. W.;Zemlyanov, D. Y.;Durbin, S. M.
利用Al k - α (1486.6 eV)和同步辐射（150 ~ 1486 eV）的x射线光谱学研究了ZnO单晶近表面原子组成和价带电子结构的极性相关效应。特别是，从最低结合能价带态发出的光在zn -极性面明显比o -极性面强。这是一个一致的效应，可以用作氧化锌和其他纤锌矿半导体晶体极性的简单，非破坏性指标。(C) 2011年美国物理研究所。(doi: 10.1063/1.3562308)
Significant polarity-related effects were observed in the near-surface atomic composition and valence band electronic structure of ZnO single crystals, investigated by x-ray photoemission spectroscopy using both Al K-alpha (1486.6 eV) and synchrotron radiation (150 to 1486 eV). In particular, photoemission from the lowest binding energy valence band states was found to be significantly more intense on the Zn-polar face compared to the O-polar face. This is a consistent effect that can be used as a simple, nondestructive indicator of crystallographic polarity in ZnO and other wurtzite semiconductors. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3562308]