Pushing the detection limit of thin film magnetoelectric heterostructures
Pushing the detection limit of thin film magnetoelectric heterostructures
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DOI：
10.1557/jmr.2017.58
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发表时间：
2017-03-01
影响因子：
2.7
通讯作者：
Meyners, Dirk
中科院分区：
文献类型：
--
作者：
Roebisch, Volker;Salzer, Sebastian;Meyners, Dirk
复合磁电实现薄膜异质结构的讨论，鉴于其适用性作为高灵敏度的磁场传感器。这里，PZT或AlN用作压电元件。磁致伸缩相由基于FeCo或（Fe 90 Co 10）（78）Si 12 B10的层状系统组成。所有的功能层沉积在硅悬臂梁结构与典型的横向尺寸为25毫米2.2毫米的几微米的厚度。磁电系数高达6900 V/cm Oe和低至1 pT/（Hz）（1/2）的检测限进行了测量。目前，最好的结果表明，在958 Hz频率下，使用一组两个传感器进行外部噪声抑制的检测限为500 fT/（Hz）（1/2）。提出了一种频率转换技术，以拓宽谐振式磁电传感器的适用性，以更宽的频率范围。最后，实现的传感器性能进行评估方面的典型磁场振幅在医疗应用中。
Composite magnetoelectrics implemented as thin film heterostructures are discussed in view of their applicability as highly sensitive magnetic field sensors. Here, either PZT or AlN served as piezoelectric component. The magnetostrictive phase consisted of layer systems based on FeCo or (Fe90Co10)(78)Si12B10. All functional layers were deposited with thicknesses of a few micrometers on Si cantilever structures with typical lateral dimensions of 25 mm by 2.2 mm. Magnetoelectric coefficients as large as 6900 V/cm Oe and a limit of detection as low as 1 pT/(Hz)(1/2) were measured. Currently, the best result demonstrates a detection limit of 500 fT/(Hz)(1/2) at 958 Hz frequency using a set of two sensors for external noise suppression. A frequency conversion technique is proposed to broaden the applicability of resonant magnetoelectric sensors to a wider frequency range. Finally, the achieved sensor performance is evaluated with regard to typical magnetic field amplitudes in medical applications.