Raman Spectroscopy of Boron-Doped Single-Layer Graphene
Raman Spectroscopy of Boron-Doped Single-Layer Graphene
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DOI：
10.1021/nn301728j
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发表时间：
2012-07-01
期刊：
影响因子：
17.1
通讯作者：
Dresselhaus, Mildred S.
中科院分区：
文献类型：
--
作者：
Kim, Yoong Ahm;Fujisawa, Kazunori;Dresselhaus, Mildred S.
将氮等外来原子引入 sp(2) 杂化碳原子单层的六边形网络已被证明，并构成调整石墨烯固有性质的有效工具。在这里，我们报告硼原子可以有效地取代石墨烯中的碳。通过机械剥离硼掺杂石墨制备了硼取代掺杂的单层石墨烯。 X射线光电子能谱表明石墨中硼的取代量约为0.22原子％。拉曼光谱表明单层石墨烯中硼原子的间距为 4.76 nm。与 G 波段相比，D 波段的强度高出 7 倍，这是因为硼原子在发射声子之前发生弹性散射的光激发电子。单层替代硼掺杂石墨烯中的 G 带频率没有变化，这可以通过 p 型硼掺杂（硬化）抵消较大碳硼键长度的拉伸应变效应（软化）来解释。掺硼石墨烯似乎是设计石墨烯物理和化学性质的有用工具。
The introduction of foreign atoms, such as nitrogen, into the hexagonal network of an sp(2)-hybridized carbon atom monolayer has been demonstrated and constitutes an effective tool for tailoring the intrinsic properties of graphene. Here, we report that boron atoms can be efficiently substituted for carbon in graphene. Single-layer graphene substitutionally doped with boron was prepared by the mechanical exfoliation of boron-doped graphite. X-ray photoelectron spectroscopy demonstrated that the amount of substitutional boron in graphite was similar to 0.22 atom %. Raman spectroscopy demonstrated that the boron atoms were spaced 4.76 nm apart in single-layer graphene. The 7-fold higher intensity of the D-band when compared to the G-band was explained by the elastically scattered photoexcited electrons by boron atoms before emitting a phonon. The frequency of the G-band in single-layer substitutionally boron-doped graphene was unchanged, which could be explained by the p-type boron doping (stiffening) counteracting the tensile strain effect of the larger carbon boron bond length (softening). Boron-doped graphene appears to be a useful tool for engineering the physical and chemical properties of graphene.