ELECTRONIC-STRUCTURE OF 3D-PYRITE-TYPE AND MARCASITE-TYPE SULFIDES

ELECTRONIC-STRUCTURE OF 3D-PYRITE-TYPE AND MARCASITE-TYPE SULFIDES
复制标题

DOI:
10.1088/0022-3719/15/30/010
复制
发表时间:
1982-01-01
期刊:
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS
影响因子:
--
通讯作者:
BULLETT, DW
BULLETT, DW
中科院分区:
其他
文献类型:
--
作者:
BULLETT, DW

文献摘要

被引文献

相似文献

电子结构计算报告的3d黄铁矿型硫化物Fes 2,CoS 2,NiS 2,CuS 2和ZnS 2,和白铁矿型FeS 2。的能带与实验数据进行了比较。FeS 2被计算为半导体,具有0.7 eV(黄铁矿)或0.4 eV(白铁矿)的间接间隙,将填充的t 2g和空的e g子带分开。在ZnS 2的d带福尔斯下降到低于主要的,完全占据的S p带给半导体间隙约= 2 eV的最低的金属s和S 2 p σ * 带。的中间体化合物CoS 2,NiS 2和CuS 2,在目前的限制离域电子和顺磁交换电位,被发现是金属;在这些d状态移动稳定下来,通过SP带。硫的s和p价带分别在费米能级以下11-19 eV和2-9 eV的能量范围内延伸,与光电子谱符合得很好。
Electronic structure calculations are reported for the 3d pyrite-type sulphides Fes 2, CoS 2, NiS 2, CuS 2 and ZnS 2, and for marcasite-type FeS 2. The energy bands are compared with the experimental data available. FeS 2 is calculated to be a semiconductor, with an indirect gap of 0.7 eV (pyrite) or 0.4 eV (marcasite) separating filled t 2g and empty e g sub-bands. In ZnS 2 the d band falls below the main, fully occupied S p bands to give a semiconducting gap approximately= 2 eV to the lowest metal s and S 2 p sigma* bands. The intermediate compounds CoS 2, NiS 2 and CuS 2, within the present limitations of delocalised electrons and paramagnetic exchange potentials, are found to be metals; in these the d states move steadily down through the S p bands. Sulphur s and p valence bands extend through energy ranges 11-19 eV and 2-9 eV respectively below the Fermi level, in good agreement with photoelectron spectra.