Large-Area Niobium Titanium Nitride Superconducting Microstrip Single-Photon Detector Fabricated Using a Photolithography Process
Large-Area Niobium Titanium Nitride Superconducting Microstrip Single-Photon Detector Fabricated Using a Photolithography Process
复制标题
利用光刻工艺制备大面积铌钛氮化超导微带单光子探测器
DOI:
10.1109/tasc.2023.3249130
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发表时间:
2023
影响因子:
1.8
通讯作者:
M. Yabuno;F. China;S. Miki;H. Terai
中科院分区:
文献类型:
--
作者:
M. Yabuno;F. China;S. Miki;H. Terai
In this paper, we present a large-area niobium titanium nitride (NbTiN) superconducting microstrip single-photon detector (SMSPD) fabricated using a photolithography process. We fabricated a 1-μm-wide NbTiN-SMSPD covering 420 × 420 μm2 active area with a filling factor of 20% using an i-line stepper. The detector is cooled down to approximately 2.2 K, and its performance is evaluated at the wavelengths from visible to near-infrared. The detector operates stably without a shunt resistor and shows single-photon sensitivity for photons with a wavelength of 1550 nm. The bias current dependence of the detection count rate is measured at the wavelengths from 406 to 1550 nm. The saturation of the detection count rate with increasing the bias current was successfully observed at wavelengths below 850 nm, suggesting an internal detection efficiency approaching 100%. Furthermore, we evaluated the timing jitter performance using the femtosecond pulse laser with a wavelength of 1550 nm. Consequently, we achieved a system timing jitter of 85 ps for a light spot diameter of 100 μm.