Improvement in Antimony-Doped Ultrashallow Junction Sheet Resistance by Dopant Pileup Reduction at the SiO2/Si Interface
Improvement in Antimony-Doped Ultrashallow Junction Sheet Resistance by Dopant Pileup Reduction at the SiO2/Si Interface
复制标题
通过减少 SiO2/Si 界面处的掺杂剂堆积来改善掺锑超浅结薄层电阻
DOI：
10.1143/jjap.39.2194
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发表时间：
2000
影响因子：
1.5
通讯作者：
Hiroaki Furumoto
中科院分区：
文献类型：
--
作者：
K. Shibahara;K. Egusa;Koji Kamesaki;Hiroaki Furumoto
采用低能Sb注入和快速热退火（RTA）技术，研究了亚100 nm金属氧化物半导体场效应晶体管（MOSFET）超浅低阻结的形成。在Si/SiO2界面处的Sb堆积和在炉退火情况下观察到的由此产生的掺杂剂损失通过RTA技术减少。结果，19 nm深结的薄层电阻降低到0.84 kΩ/sq。当注入剂量增加到1×1014 cm-2时，结深为24 nm，方块电阻为0.45k Ω/sq。获得了在As的情况下，即使使用RTA也没有抑制堆积。这些结果表明，Sb作为超浅延伸地层的掺杂剂优于As的上级。
Ultrashallow low-resistive junction formation has been investigated for sub-100-nm metal oxide semiconductor field effect transistors (MOSFETs) using low-energy Sb implantation and the rapid thermal annealing (RTA) technique. The Sb pileup at the Si/SiO2 interface and the resulting dopant loss observed in the furnace annealing cases was reduced by the RTA technique. As a result, the sheet resistance of 19-nm-deep junctions was decreased to 0.84 kΩ/sq. By increasing the implantation dose to 1×1014 cm-2, a junction depth of 24 nm and sheet resistance of 0.45 kΩ/sq. were obtained. In the case of As, the pileup was not suppressed even with RTA. These results indicate that Sb is superior to As as a dopant for ultrashallow extension formations.