High performance, self-powered ultraviolet photodetector based on a ZnO nanoarrays/GaN structure with a CdS insert layer
High performance, self-powered ultraviolet photodetector based on a ZnO nanoarrays/GaN structure with a CdS insert layer
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基于带有 CdS 插入层的 ZnO 纳米阵列/GaN 结构的高性能自供电紫外光电探测器
DOI：
10.1039/c7nj01140g
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发表时间：
2017-06
影响因子：
3.3
通讯作者：
Wang Hao
中科院分区：
文献类型：
--
作者：
Zhou Hai;Gui Pengbin;Yang Lu;Ye Cong;Xue Mengni;Mei Jun;Song Zehao;Wang Hao
实现高响应度的自供电紫外（UV）光电探测器是具有挑战性的。在此，我们报告了一种基于ZnO纳米阵列/GaN结构的高响应度自供电UV光电探测器，该结构具有CdS插入层，其响应度在300 nm处高达176 mA W-1，这大于先前报道的ZnO基自供电UV PD的值。此外，基于优化的CdS厚度与5个循环次数，在反向偏压下的Iph/Idark比达到1000以上。该器件具有良好的紫外-可见光响应特性，紫外-可见光响应比（R300 nm/R500 nm）达到48。此外，在350 nm UV区域以下，ZnO/CdS核壳阵列PD的检测率高于1012 cm Hz 1/2 W-1，这与市售的UV增强型Si光电二极管的检测率相当。上述n-ZnO/CdS/p-GaN结构的优异光电性能是由于CdS插入层作为载流子过渡层，实现了阶梯能级结构，有效地减少了界面电荷复合，促进了电子转移。
Achieving high responsivity for a self-powered ultraviolet (UV) photodetector is challenging. Herein, we report a high responsivity self-powered UV photodetector based on a ZnO nanoarrays/GaN structure with a CdS insert layer whose responsivity reached as high as 176 mA W−1 at 300 nm, which is larger than the values of previously reported ZnO-based self-powered UV PDs. Moreover, based on the optimized CdS thickness with 5 cycle times, more than 1000 for the Iph/Idark ratio at the reverse biases was achieved. The device showed a good visible-blind UV photoresponse characteristic with the UV-visible responsivity ratio (R300nm/R500nm) reaching 48. Moreover, below the 350 nm UV region, the detectivity of the ZnO/CdS core–shell array PD was above 1012 cm Hz1/2 W−1, which is equivalent to that of the commercially available UV-enhanced Si photodiodes. The excellent photoelectric properties of the n-ZnO/CdS/p-GaN structure described above is due to the CdS insert layer, which was used as a carrier transition layer and realized a stepped energy level structure to effectively reduce the interfacial charge recombination and facilitate electron transfer.
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