Heterogeneous integration of lithium niobate and silicon nitride waveguides for wafer-scale photonic integrated circuits on silicon
Heterogeneous integration of lithium niobate and silicon nitride waveguides for wafer-scale photonic integrated circuits on silicon
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DOI：
10.1364/ol.42.000803
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发表时间：
2017-02-15
期刊：
影响因子：
3.6
通讯作者：
Bowers, John E.
中科院分区：
文献类型：
--
作者：
Chang, Lin;Pfeiffer, Martin H. P.;Bowers, John E.
理想的用于非线性光子应用的光子集成电路需要高的光学非线性和低的损耗。这项工作展示了一个异质平台，通过将LiNbate(LN)薄膜结合到硅上的氮化硅(Si3N4)波导层上。它不仅提供了大的二阶和三阶非线性系数，而且在Si3N4和LN-Si3N4波导中都表现出了低的传输损耗。锥形使这两种波导之间的低损耗模式转换成为可能。该平台对于各种片上应用是必不可少的，例如调制器、变频器和量子通信。(C)2017年美国光学学会
An ideal photonic integrated circuit for nonlinear photonic applications requires high optical nonlinearities and low loss. This work demonstrates a heterogeneous platform by bonding lithium niobate (LN) thin films onto a silicon nitride (Si3N4) waveguide layer on silicon. It not only provides large second-and third-order nonlinear coefficients, but also shows low propagation loss in both the Si3N4 and the LN-Si3N4 waveguides. The tapers enable lowloss- mode transitions between these two waveguides. This platform is essential for various on-chip applications, e.g., modulators, frequency conversions, and quantum communications. (C) 2017 Optical Society of America