Excited-state spectroscopy of single Pt atoms in Si
Excited-state spectroscopy of single Pt atoms in Si
复制标题
Si 中单个 Pt 原子的激发态光谱
DOI：
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发表时间：
2008
期刊：
影响因子：
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通讯作者：
W. Wernsdorfer
中科院分区：
文献类型：
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作者：
L. Calvet;J. Snyder;W. Wernsdorfer
研究了肖特基势垒金属氧化物半导体场效应晶体管反型层低温输运中叠加在直接隧穿电流上的谐振峰。共振归因于单个铂原子从金属接触扩散到金属/半导体界面附近的耗尽宽度。激发态光谱和磁场被用来识别不同的能级。观察到单重态中的双施主能级和归因于三重施主状态的另一个能级。
Resonant peaks superimposed on the direct tunneling current in the low-temperature transport of Schottky barrier metal-oxide-semiconductor field-effect transistor inversion layers are investigated. The resonances are attributed to single Pt atoms that have diffused from the metallic contacts into the depletion width near the metal/semiconductor interface. Excited-state spectroscopy and magnetic fields are used to identify different levels. A double donor level in a singlet state and another level that is attributed to a triple donor state are observed.