GaInN light emitting diodes with AlInN/GaN distributed Bragg reflector on Si
GaInN light emitting diodes with AlInN/GaN distributed Bragg reflector on Si
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DOI：
10.1002/pssc.200778441
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发表时间：
2008-05
期刊：
影响因子：
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通讯作者：
H. Ishikawa;T. Jimbo;T. Egawa
中科院分区：
文献类型：
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作者：
H. Ishikawa;T. Jimbo;T. Egawa
我们报道了在Si衬底上插入晶格匹配的AlInN/GaN分布布拉格反射器（DBR）对GaInN发光二极管（LED）性能的影响。晶格匹配的AlInN/GaN DBR在裂纹抑制和界面光滑性方面上级以前使用的AlGaN/AlN DBR。LED的光输出功率（PEL）随着DBR中对的数目的增加而增加，并且与计算值吻合得很好。14.5对AlInN/GaN DBR LED的PEL是非DBR LED的约3.6倍。（© 2008 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆）
We report the effect of inserting a lattice-matched AlInN/GaN distributed Bragg reflector (DBR) on the performance of GaInN light emitting diodes (LEDs) on Si substrates. The lattice-matched AlInN/GaN DBR is superior to the previously used AlGaN/AlN DBR with respect to the suppression of cracking and the interface smooth ness. The light output power (PEL) of the LED increases with increasing number of pairs in the DBR and agrees well with the calculated one. The PEL of the 14.5-pair AlInN/GaN DBR LED is about 3.6-fold higher than that of the non-DBR LED. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)