Spectroscopic characterization of Si/Mo thin-film stack at extreme ultraviolet range.
Spectroscopic characterization of Si/Mo thin-film stack at extreme ultraviolet range.
复制标题
极紫外范围内 Si/Mo 薄膜叠层的光谱表征。
作者：
Yen;Yin;I;Sheng
提出了一种利用共光路光学相干层析成像来表征Si/Mo薄膜叠层厚度及其复传递函数的非侵入性方法，并进行了分析和实验验证。利用脉冲能量为1.01 mJ的四级纳秒Yb：光纤激光放大器激励激光等离子体(LPP)极紫外线(EUV)光源。桌面LPP EUV光源结构紧凑，性能稳定，可用于产生EUV干涉条纹。在13.5 nm波长范围内验证了所测得的Si/Mo电堆的复传递函数。
A noninvasive method for characterizing Si/Mo thin-film stack thickness and its complex transfer function using common-path optical coherence tomography is proposed, analyzed, and experimentally demonstrated. A laser-produced plasma (LPP)-based extreme ultraviolet (EUV) source was excited by a four-stage nanosecond Yb:fiber laser amplifier with a pulse energy of 1.01 mJ. The tabletop LPP EUV source was compact and stable for generating the EUV interference fringes. The measured complex transfer function of the Si/Mo stack was verified near the pristine 13.5-nm wavelength range.
影响因子：
8.6
作者：
A. Ozawa;J. Rauschenberger;J. Rauschenberger;C. Gohle;Maximilian Georg Herrmann;D. Walker;V. Pervak;A. Fernández;R. Graf;A. Apolonski;R. Holzwarth;F. Krausz;F. Krausz;T. Hänsch;T. Hänsch;T. Udem
通讯作者：
A. Ozawa;J. Rauschenberger;J. Rauschenberger;C. Gohle;Maximilian Georg Herrmann;D. Walker;V. Pervak;A. Fernández;R. Graf;A. Apolonski;R. Holzwarth;F. Krausz;F. Krausz;T. Hänsch;T. Hänsch;T. Udem