Enhanced optical power of GaN-based light-emitting diode with compound photonic crystals by multiple-exposure nanosphere-lens lithography
Enhanced optical power of GaN-based light-emitting diode with compound photonic crystals by multiple-exposure nanosphere-lens lithography
复制标题
通过多次曝光纳米球透镜光刻增强复合光子晶体氮化镓基发光二极管的光功率
DOI：
10.1063/1.4889745
复制
发表时间：
2014-07
影响因子：
4
通讯作者：
Li, Jinmin
中科院分区：
文献类型：
--
作者：
Zhao, Yun;Zhou, Pengyu;Wang, Junxi;Li, Jinmin
p-GaN 上具有单光子晶体、双光子晶体、三光子晶体和四光子晶体 (PC) 的发光二极管 (LED) 是通过利用聚苯乙烯球的聚焦行为的多次曝光纳米球透镜光刻 (MENLL) 工艺制造的。这种技术对于制造复合纳米图案来说是简单且经济的。通过数学计算确定优化倾斜角度为26.6°，尽量避免图案重叠。扫描电子显微镜和模拟结果表明，MENLL 产生的图案是多个椭圆形的组合。与平面LED相比，单PC、双PC、三PC和四PC LED在350mA的驱动电流下，光输出功率分别提高了14.78%、36.03%、53.68%和44.85%。此外，所有 PC 结构都不会导致电气性能下降。模拟结果表明，具有三叶草形状三重PC的LED的最高光提取效率是由于最大的散射...
The light-emitting diodes (LEDs) with single, twin, triple, and quadruple photonic crystals (PCs) on p-GaN are fabricated by multiple-exposure nanosphere-lens lithography (MENLL) process utilizing the focusing behavior of polystyrene spheres. Such a technique is easy and economical for use in fabricating compound nano-patterns. The optimized tilted angle is decided to be 26.6° through mathematic calculation to try to avoid the overlay of patterns. The results of scanning electron microscopy and simulations reveal that the pattern produced by MENLL is a combination of multiple ovals. Compared to planar-LED, the light output power of LEDs with single, twin, triple, and quadruple PCs is increased by 14.78%, 36.03%, 53.68%, and 44.85% under a drive current 350 mA, respectively. Furthermore, all PC-structures result in no degradation of the electrical properties. The stimulated results indicate that the highest light extraction efficiency of LED with the clover-shape triple PC is due to the largest scattering ...
登录
查看更多内容
影响因子：
3.6
作者：
Liyong Jiang;W. Jia;G. Zheng;Xiang-yin Li
通讯作者：
Liyong Jiang;W. Jia;G. Zheng;Xiang-yin Li
DOI：
10.1016/j.photonics.2012.04.005
发表时间：
2012-10
期刊：
Photonics and Nanostructures: Fundamentals and Applications
影响因子：
--
作者：
C. Hsu;Yang‐Chun Lee;Hsuen‐Li Chen;Y. Chou
通讯作者：
C. Hsu;Yang‐Chun Lee;Hsuen‐Li Chen;Y. Chou
影响因子：
2.5
作者：
Yu-Ting Wang;Y. Chou;Liang-Yi Chen;Yu-Feng Yin;Yen-Chen Lin;Jian-jang Huang
通讯作者：
Yu-Ting Wang;Y. Chou;Liang-Yi Chen;Yu-Feng Yin;Yen-Chen Lin;Jian-jang Huang
影响因子：
8.6
作者：
YABLONOVITCH, E
通讯作者：
YABLONOVITCH, E
影响因子：
8.6
作者：
C. M. Anderson;K. Giapis
通讯作者：
C. M. Anderson;K. Giapis