Synthesis of pristine graphene-like behaving rGO thin film: Insights into what really matters
Synthesis of pristine graphene-like behaving rGO thin film: Insights into what really matters
复制标题
DOI：
10.1016/j.carbon.2021.10.011
复制
发表时间：
2021-10-22
期刊：
影响因子：
10.9
通讯作者：
Mulchandani, Ashok
中科院分区：
文献类型：
--
作者：
Sedki, Mohammed;Mirabedini, Pegah S.;Mulchandani, Ashok
尽管GO/rGO市场的巨大扩张，但显然缺乏获得高质量、大规模GO和rGO纳米片/薄膜的实验研究，这是电子应用的关键要求。在这项工作中，详细的实验研究侧片尺寸对GO/rGO的性能的影响，由密度泛函理论（DFT）计算支持，首次提出，以帮助制备原始的石墨烯类rGO。此外，我们研究了在低温（200 SC）下，在环境压力下，热还原对rGO相应的电子性质的影响。使用电流-电压（I-V）分析、光学和电子显微镜、原子力显微镜、拉曼、XPS和定量C-13 NMR光谱来研究和优化rGO。优化的rGO场效应晶体管（rGO-FET）器件表现出最高的电荷载流子迁移率，即2，962（空穴）和2，183（电子）cm（2）/V.s.此外，rGO-FET的双极性特性曲线显示了高质量石墨烯的双极性行为，狄拉克点在零附近。此外，在这项工作中制备的rGO纳米片的光学带隙（类似于0.4eV）是所报道的rGO的最小带隙之一。这些发现突出了我们的研究对于合成大规模石墨烯类rGO薄膜，用于超快速，低功率晶体管应用的重要性。(C)2021爱思唯尔有限公司保留所有权利。
Despite the huge expansion of GO/rGO market, there is a clear lack of experimental studies on getting high quality, large scale GO and rGO nanosheets/thin films, which is a critical requirement for electronic applications. In this work, a detailed experimental study on the effect of lateral sheet size on properties of GO/rGO, supported by density functional theory (DFT) calculations, is presented for the first time, to help prepare pristine graphene-like rGO. Furthermore, we investigated the effect of thermal reduction at low temperature (200 SC), under ambient pressure, on the corresponding electronic properties of rGO. Current-voltage (I-V) analysis, optical and electron microscopy, atomic force microscopy, Raman, XPS, and quantitative C-13 NMR spectroscopy were used to study and optimize rGO. The optimized rGO-field-effect transistor (rGO-FET) device exhibited the highest charge carrier mobilities, i.e. 2,962 (holes) and 2,183 (electrons) cm(2)/V.s. Furthermore, the transconductance characteristic curve of rGO-FET showed the ambipolar behavior of high-quality graphene, with Dirac point around zero. In addition, the optical band gap of rGO nanosheets (similar to 0.4 eV), prepared in this work, is among the smallest reported band gaps for rGO. These findings highlight the significance of our study for synthesizing large-scale graphene-like rGO thin film, for ultra-fast, low-power transistor applications. (C) 2021 Elsevier Ltd. All rights reserved.