Terahertz conductivity and ultrafast dynamics of photoinduced charge carriers in intrinsic 3C and 6H silicon carbide
Terahertz conductivity and ultrafast dynamics of photoinduced charge carriers in intrinsic 3C and 6H silicon carbide
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DOI：
10.1063/1.4890619
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发表时间：
2014-07
影响因子：
4
通讯作者：
A. Rubano;M. Wolf;T. Kampfrath
中科院分区：
文献类型：
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作者：
A. Rubano;M. Wolf;T. Kampfrath
利用光泵太赫兹探测技术，在皮秒时间尺度上研究了两种常见多型碳化硅（3C-SiC和6 H-SiC）中光生载流子的太赫兹电导率.我们发现，电导率，测量从0.7至3太赫兹，是很好地描述了德鲁德模型，并获得一个速度弛豫时间为75 fs，独立的样品和电荷载流子密度。相比之下，在两个多型体的载流子弛豫速率不同的数量级：在6 H-和3C-SiC，重组进行的时间尺度上的几个皮秒和纳秒以上，分别。
The terahertz (THz) conductivity of photoinduced charge carriers in two common polytypes of silicon carbide, 3C-SiC and 6H-SiC, is studied on picosecond time scales using an optical-pump THz-probe technique. We find that the conductivity, measured from 0.7 to 3 THz, is well described by the Drude model, and obtain a velocity relaxation time of 75 fs, independent of sample and charge-carrier density. In contrast, the carrier relaxation rates in the two polytypes differ by orders of magnitude: in 6H- and 3C-SiC, recombination proceeds on a time scale of few picoseconds and beyond nanoseconds, respectively.